BSS84AKW Datasheet | NXP Semiconductors

description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits - Logic-level patible - Very fast switching - Trench MOSFET technology - ESD protection up to 1 k V - AEC-Q101 qualified 1.3 Applications - Relay driver - High-speed line driver - High-side loadswitch - Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -10 V; Tamb = 25 °C VGS = -10 V; ID = -100 m A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ 4.5 Max Unit -50 20 V V -150 m A 7.5 Ω Static characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors 50 V, 150 m A P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 G 3 D Simplified outline Graphic symbol SOT323 (SC-70) sym146 3. Ordering information Table 3. Ordering information Package Name BSS84AKW SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 Type number 4. Marking Table 4. Marking codes Marking code[1] %VT Type number BSS84AKW [1] % = placeholder for manufacturing site...